DEPOSITION OF GROUP-III NITRIDES ON SILICON SUBSTRATES

被引：16

作者：

BUTTER, E ^{[1
]}

FITZL, G ^{[1
]}

HIRSCH, D ^{[1
]}

LEONHARDT, G ^{[1
]}

SEIFERT, W ^{[1
]}

PRESCHEL, G ^{[1
]}

机构：

[1] WERK FERNSEHELEKT,DDR-116 BERLIN,GER DEM REP

来源：

THIN SOLID FILMS | 1979年 / 59卷 / 01期

关键词：

D O I：

10.1016/0040-6090(79)90360-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reaction between silicon substrates and ammonia present in the systems GaCl (AlCl3)-NH3-H2 (He) during the vapour phase epitaxy of Group III nitrides has been investigated. Silicon was treated with an NH3-HCl-H2 mixture at a constant temperature in the range873-1273 K. Using electron spectroscopy for chemical analysis measurements layers of Si3N4 and Si3N4-SiO2 were detected at the silicon surface. Reflection high energy electron diffraction tests indicated the amorphous nature of this passivating layer which was found partially or completely to prevent epitaxial deposition of the Group III nitrides. The deposits of GaN on Si(111) and Si(100) were either polycrystalline or textured and an amorphous Si3N4-SiO2 interface was found. © 1979.

引用

页码：25 / 31

页数：7

共 11 条

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