共 12 条
[1]
BOOKER GR, 1962, J APPL PHYS, V13, P446
[3]
CHU TL, 1968, ELECTROCHEM TECHNOL, V6, P56
[5]
DRUM CM, 1963, THESIS U VIRGINIA
[6]
A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR
[J].
PHILOSOPHICAL MAGAZINE,
1967, 15 (138)
:1167-&
[7]
NUCLEATION AND INITIAL-GROWTH BEHAVIOR OF THIN-FILM DEPOSITS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1967, 4 (05)
:209-&
[9]
GROWTH + STRUCTURE OF GOLD + SILVER DEPOSITS FORMED BY EVAPORATION INSIDE ELECTRON MICROSCOPE
[J].
PHILOSOPHICAL MAGAZINE,
1964, 10 (103)
:127-&
[10]
EPITAKTISCHES AUFWACHSEN VON ALN-SCHICHTEN AUF SIC- UND SI-EINKRISTALLEN IN DER GASENTLADUNG
[J].
PHYSICA STATUS SOLIDI,
1965, 9 (02)
:K73-&