LOW-TEMPERATURE GROWTH OF GALLIUM NITRIDE

[1] CHEGNOV VP, 1979, INORG MATER+, V15, P363

[2] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1211 - +

[3] ELECTRICAL PROPERTIES OF NORMAL TYPE VAPOR-GROWN GALLIUM NITRIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (05) : 885 - 895

[4] MARDAR R, 1975, J CRYST GROWTH, V31, P197

[5] MOLECULAR-BEAM EPITAXY OF GAP AND GAAS1-XPX [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) : 2093 - 2101

[6] IONIZED-CLUSTER BEAM EPITAXIAL-GROWTH OF GAP FILMS ON GAP AND SI SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 334 - 339

[7] KINETICS OF EPITAXIAL-GROWTH OF GAN USING GA, HCL AND NH3 [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 22 (01) : 1 - 5

[8] REACTIVE MOLECULAR-BEAM EPITAXY OF ALUMINUM NITRIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 990 - 993

[1] CHEGNOV VP, 1979, INORG MATER+, V15, P363

[2] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1211 - +

[3] ELECTRICAL PROPERTIES OF NORMAL TYPE VAPOR-GROWN GALLIUM NITRIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (05) : 885 - 895

[4] MARDAR R, 1975, J CRYST GROWTH, V31, P197

[5] MOLECULAR-BEAM EPITAXY OF GAP AND GAAS1-XPX [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) : 2093 - 2101

[6] IONIZED-CLUSTER BEAM EPITAXIAL-GROWTH OF GAP FILMS ON GAP AND SI SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 334 - 339

[7] KINETICS OF EPITAXIAL-GROWTH OF GAN USING GA, HCL AND NH3 [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 22 (01) : 1 - 5

[8] REACTIVE MOLECULAR-BEAM EPITAXY OF ALUMINUM NITRIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 990 - 993