IONIZED-CLUSTER BEAM EPITAXIAL-GROWTH OF GAP FILMS ON GAP AND SI SUBSTRATES

被引：10

作者：

MORIMOTO, K

WATANABE, H

ITOH, S

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(78)90459-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：334 / 339

页数：6

共 11 条

[1] GONDA S, 1977, 38TH FALL M I APPL P, P215
[2] GONDA S, 1977, 38TH FALL M I APPL P, P296
[3] ISHIDA I, 1976, THIN SOLID FILMS, V39, P227
[4] MOLECULAR-BEAM EPITAXY OF GAP AND GAAS1-XPX
MATSUSHIMA, Y
GONDA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) : 2093 - 2101
[5] MORIMOTO K, 1977, 38TH FALL M I APPL P, P383
[6] IONIZED-CLUSTER BEAM DEPOSITION AND EPITAXY AS FABRICATION TECHNIQUES FOR ELECTRON DEVICES
TAKAGI, T
YAMADA, I
SASAKI, A
[J]. THIN SOLID FILMS, 1977, 45 (03) : 569 - 576
[7] Takagi T., 1976, International Electron Devices Meeting. (Technical digest), P605
[8] MN-IMPLANTED ZNS THIN-FILM ELECTROLUMINESCENT DEVICE
TAKAGI, T
YAMADA, I
SASAKI, A
ISHIBASHI, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (11) : 1110 - 1114
[9] TAKAGI T, 1975, J VACUUM SCI TECHNOL, V12, P341
[10] TAKAHASHI K, 1977, 38TH FALL M I APPL P, P303