MOLECULAR-BEAM EPITAXY OF GAP AND GAAS1-XPX

被引：35

作者：

MATSUSHIMA, Y ^{[1
]}

GONDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 11期

关键词：

D O I：

10.1143/JJAP.15.2093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2093 / 2101

页数：9

相关论文

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[7] GONDA S, 1976, J APPL PHYS, V47, P4198, DOI 10.1063/1.323288
[8] CHARACTERIZATION AND SUBSTRATE TEMPERATURE DEPENDENCE OF CRYSTALLINE STATE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[10] GRADED-BANDGAP 3-5 TERNARY COMPOUND FILMS BY MOLECULAR-BEAM EPITAXY
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