PIEZOMODULATED AND PHOTOMODULATED REFLECTIVITY SPECTRA OF ZNSE/GAAS AND CDTE/INSB EPILAYERS

被引：73

作者：

LEE, YR ^{[1
]}

RAMDAS, AK ^{[1
]}

KOLODZIEJSKI, LA ^{[1
]}

GUNSHOR, RL ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.38.13143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：13143 / 13149

页数：7

共 27 条

[1] PHOTOLUMINESCENCE IN HIGH-RESISTIVITY CDTE-IN
BARNES, CE
ZANIO, K
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3959 - 3964
[2] BATZ B, 1972, SEMICONDUCT SEMIMET, V9, P315
[3] DEFORMATION POTENTIALS OF K = 0 STATES OF TETRAHEDRAL SEMICONDUCTORS
BLACHA, A
PRESTING, H
CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1984, 126 (01): : 11 - 36
[4] DONOR BOUND-EXCITON EXCITED-STATES IN ZINC SELENIDE
DEAN, PJ
HERBERT, DC
WERKHOVEN, CJ
FITZPATRICK, BJ
BHARGAVA, RN
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 4888 - 4901
[5] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS
ELLIOTT, RJ
[J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389
[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001)
FARROW, RFC
JONES, GR
WILLIAMS, GM
YOUNG, IM
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 954 - 956
[7] STRUCTURAL DEFECT RELATED DONOR-BOUND EXCITON SPECTRA IN CDTE EPITAXIAL-FILMS
FENG, ZC
BURKE, MG
CHOYKE, WJ
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 128 - 130
[8] POLARITON EFFECT IN DEGENERATE VALENCE BAND SEMICONDUCTORS
FISHMAN, G
[J]. SOLID STATE COMMUNICATIONS, 1978, 27 (11) : 1097 - 1100
[9] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS
GILLEO, MA
BAILEY, PT
HILL, DE
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 898 - &
[10] PHOTOREFLECTANCE CHARACTERIZATION OF INTERBAND-TRANSITIONS IN GAAS/ALGAAS MULTIPLE QUANTUM WELLS AND MODULATION-DOPED HETEROJUNCTIONS
GLEMBOCKI, OJ
SHANABROOK, BV
BOTTKA, N
BEARD, WT
COMAS, J
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 970 - 972

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