A MECHANISM FOR SELECTIVITY LOSS DURING TUNGSTEN CVD

[1] BLEWER RS, 1986, SOLID STATE TECHNOL, V29, P117

[2] BROADBENT EK, 1985, SOLID STATE TECHNOL, V28, P51

[3] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1427 - 1433

[4] KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1534 - 1543

[5] BUTSKII VD, 1977, ZH NEORG KHIM+, V22, P14

[6] BUTSKII VD, 1977, ZH NEORG KHIM+, V22, P1416

[7] OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J]. SURFACE SCIENCE, 1977, 69 (02) : 385 - 402

[8] CREIGHTON JR, 1987, 1986 P WORKSH TUNGST, V2, P43

[9] DAVIS LE, 1986, HDB AUGER ELECTRON S

[10] DITTMER G, 1977, PHILIPS RES REP, V32, P341

[1] BLEWER RS, 1986, SOLID STATE TECHNOL, V29, P117

[2] BROADBENT EK, 1985, SOLID STATE TECHNOL, V28, P51

[3] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1427 - 1433

[4] KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1534 - 1543

[5] BUTSKII VD, 1977, ZH NEORG KHIM+, V22, P14

[6] BUTSKII VD, 1977, ZH NEORG KHIM+, V22, P1416

[7] OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J]. SURFACE SCIENCE, 1977, 69 (02) : 385 - 402

[8] CREIGHTON JR, 1987, 1986 P WORKSH TUNGST, V2, P43

[9] DAVIS LE, 1986, HDB AUGER ELECTRON S

[10] DITTMER G, 1977, PHILIPS RES REP, V32, P341