EFFECTS OF THE ENVIRONMENT ON POINT-DEFECT ENERGY-LEVELS IN SEMICONDUCTORS

被引：16

作者：

DOW, JD

ALLEN, RE

SANKEY, OF

BUISSON, JP

HJALMARSON, HP

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：502 / 507

页数：6

共 28 条

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SCHLUTER, M .

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[8] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J].

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[9]

DOW JD, UNPUBLISHED

[10] TRENDS IN SURFACE ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTORS [J].

DUKE, CB ;

MEYER, RJ ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :971-977

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