THERMAL ANNEALING OF PROTON-IRRADIATED SILICON SOLAR CELLS

被引：10

作者：

FARADAY, BJ

STATLER, RL

TAUKE, RV

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 01期

关键词：

D O I：

10.1109/PROC.1968.6136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：31 / +

页数：1

共 13 条

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FANG, PH ;

LIU, YM .

PHYSICS LETTERS, 1966, 20 (04) :344-&

[3] ANNEALING OF RADIATION INDUCED DEFECTS IN SILICON [J].

FANG, PH .

PHYSICS LETTERS, 1966, 20 (04) :343-&

[4]

FANG PH, 1965, X71365468 NASA REPT

[5] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

GOSSICK, BR .

LAMBERT, RJ .

[7]

LAMBERT RJ, 1964, NRL PROGRESS REPT, P7

[8]

LOFERSKI JJ, 1961, RCA REV, V22, P38

[9]

ROSENZWEIG W, 1962, BELL SYST TECH J, V41, P1573

[10]

STATLER RL, 1967, B AM PHYS SOC, V12, P205