CARRIER AND RADIATION CONFINEMENTS IN (GA, AL)AS-GAAS HETEROJUNCTION LASERS

[1] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211

[2] KRESSEL H, 1969, RCA REV, V30, P106

[3] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 58 - 61

[4] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[5] PANISH MB, 1969, IEEE J QUANTUM ELECT, VQE 5, P210

[6] DISPERSION OF INDEX OF REFRACTION NEAR ABSORPTION EDGE OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1653 - +

[1] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211

[2] KRESSEL H, 1969, RCA REV, V30, P106

[3] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 58 - 61

[4] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[5] PANISH MB, 1969, IEEE J QUANTUM ELECT, VQE 5, P210

[6] DISPERSION OF INDEX OF REFRACTION NEAR ABSORPTION EDGE OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1653 - +