PHOTOCONDUCTANCE MEASUREMENTS ON INAS0.22SB0.78/GAAS GROWN USING MOLECULAR-BEAM EPITAXY

被引:33
作者
BETHEA, CG
LEVINE, BF
YEN, MY
CHO, AY
机构
关键词
D O I
10.1063/1.100594
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:291 / 292
页数:2
相关论文
共 27 条
[1]   LONG WAVELENGTH INAS1-XSBX/GAAS DETECTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
BETHEA, CG ;
YEN, MY ;
LEVINE, BF ;
CHOI, KK ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1987, 51 (18) :1431-1432
[2]   THE PREPARATION OF INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
BIEFELD, RM .
JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :255-263
[3]   P-N-JUNCTION FORMATION IN INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
CHIANG, PK ;
BEDAIR, SM .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :383-385
[4]   GROWTH OF INSB AND INAS1-XSBX BY OM-CVD [J].
CHIANG, PK ;
BEDAIR, SM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2422-2426
[5]   MULTIPLE QUANTUM-WELL 10-MU-M GAAS/ALXGA1-XAS INFRARED DETECTOR WITH IMPROVED RESPONSIVITY [J].
CHOI, KK ;
LEVINE, BF ;
BETHEA, CG ;
WALKER, J ;
MALIK, RJ .
APPLIED PHYSICS LETTERS, 1987, 50 (25) :1814-1816
[6]   PHOTOEXCITED COHERENT TUNNELING IN A DOUBLE-BARRIER SUPERLATTICE [J].
CHOI, KK ;
LEVINE, BF ;
BETHEA, CG ;
WALKER, J ;
MALIK, RJ .
PHYSICAL REVIEW LETTERS, 1987, 59 (21) :2459-2462
[7]   PERIODIC NEGATIVE CONDUCTANCE BY SEQUENTIAL RESONANT TUNNELING THROUGH AN EXPANDING HIGH-FIELD SUPERLATTICE DOMAIN [J].
CHOI, KK ;
LEVINE, BF ;
MALIK, RJ ;
WALKER, J ;
BETHEA, CG .
PHYSICAL REVIEW B, 1987, 35 (08) :4172-4175
[8]   NEGATIVE DIFFERENTIAL PHOTOCONDUCTANCE IN AN ALTERNATELY DOPED MULTIPLE QUANTUM WELL STRUCTURE [J].
CHOI, KK ;
LEVINE, BF ;
BETHEA, CG ;
WALKER, J ;
MALIK, RJ .
APPLIED PHYSICS LETTERS, 1988, 52 (23) :1979-1981
[9]   SUMMARY ABSTRACT - MOLECULAR-BEAM EPITAXIAL-GROWTH OF INASSB ALLOYS AND SUPERLATTICES [J].
DAWSON, LR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :598-599
[10]  
FUKUI T, 1980, JPN J APPL PHYS, V19, P153