PHOTOLUMINESCENCE INTENSITIES FROM GAAS IMMERSED IN HCL AQUEOUS-SOLUTIONS DILUTED WITH ORGANIC-SOLVENTS

被引：5

作者：

AKITA, K

TANEYA, M

SUGIMOTO, Y

HIDAKA, H

机构：

[1] Optoelectronics Technology Research Laboratory, Tsukuba 300-26

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 07期

关键词：

D O I：

10.1149/1.2086888

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Photoluminescence (PL) for GaAs immersed in hydrochloric acid (HCl 36% aqueous solution, hereafter denoted as HCl aq.) diluted with organic solvents was studied. The PL intensities from GaAs immersed in solutions of HCl aq.-methanol and HCl aq.-trichloroethane were stable and stronger than that of GaAs in air. The PL intensities frnm GaAs immersed in HCl aq.-ethanol, HCl aq.-isopropyl alcohol, HCl aq.-acetone, and HCl diluted with water were weak as compared to that of GaAs immersed in HCl aq.-methanol. Strong PL intensity of GaAs immersed in HCl aq.-methanol solution is considered to be attributed to prevention of arsenic segregation and oxide formation on the surface. © 1990, The Electrochemical Society, Inc. All rights reserved.

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页码：2081 / 2083

页数：3

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共 11 条

[1] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J].

AMBRIDGE, T ;

STEVENSON, JL ;

REDSTALL, RM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :222-228

[2] PHOTOLUMINESCENT PROPERTIES OF N-GAAS ELECTRODES - SIMULTANEOUS DETERMINATION OF DEPLETION WIDTHS AND SURFACE HOLE-CAPTURE VELOCITIES IN PHOTOELECTROCHEMICAL CELLS [J].

BURK, AA ;

JOHNSON, PB ;

HOBSON, WS ;

ELLIS, AB .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1621-1626

[3] PHOTOLUMINESCENCE STUDIES OF SI-IMPLANTED INP [J].

CHANG, R ;

LILE, DL ;

SINGH, S ;

HWANG, T .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) :3753-3757

[4] HETEROSTRUCTURE LASERS [J].

HAYASHI, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) :1630-1642

[5] UNPINNING OF THE FERMI LEVEL ON GAAS BY FLOWING WATER [J].

IVES, NA ;

STUPIAN, GW ;

LEUNG, MS .

APPLIED PHYSICS LETTERS, 1987, 50 (05) :256-258

[6] PHOTOLUMINESCENT PROPERTIES OF PARA-GAAS ELECTRODES RELATED TO THE PHOTOCURRENT ANOMALY - DETERMINATION OF SURFACE ELECTRON-CAPTURE VELOCITIES AND DEPLETION WIDTHS IN PHOTOELECTROCHEMICAL CELLS [J].

JOHNSON, PB ;

MCMILLAN, CS ;

ELLIS, AB ;

HOBSON, WS .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) :4903-4908

[7] EFFECTS OF ION ETCHING ON PROPERTIES OF GAAS [J].

KAWABE, M ;

KANZAKI, N ;

MASUDA, K ;

NAMBA, S .

APPLIED OPTICS, 1978, 17 (16) :2556-2561

[8] A RELATIONSHIP BETWEEN SEGREGATED ARSENIC IN GAAS AND PHOTOLUMINESCENCE AND KINETICS OF ARSENIC SEGREGATION AT ROOM-TEMPERATURE [J].

LEE, HH ;

FIGUEROA, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (02) :496-499

[9] SURFACE PASSIVATION OF GAAS [J].

LEE, HH ;

RACICOT, RJ ;

LEE, SH .

APPLIED PHYSICS LETTERS, 1989, 54 (08) :724-726

[10] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY [J].

OFFSEY, SD ;

WOODALL, JM ;

WARREN, AC ;

KIRCHNER, PD ;

CHAPPELL, TI ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :475-477