PHOTOLUMINESCENCE INTENSITIES FROM GAAS IMMERSED IN HCL AQUEOUS-SOLUTIONS DILUTED WITH ORGANIC-SOLVENTS

被引:5
作者
AKITA, K
TANEYA, M
SUGIMOTO, Y
HIDAKA, H
机构
[1] Optoelectronics Technology Research Laboratory, Tsukuba 300-26
关键词
D O I
10.1149/1.2086888
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Photoluminescence (PL) for GaAs immersed in hydrochloric acid (HCl 36% aqueous solution, hereafter denoted as HCl aq.) diluted with organic solvents was studied. The PL intensities from GaAs immersed in solutions of HCl aq.-methanol and HCl aq.-trichloroethane were stable and stronger than that of GaAs in air. The PL intensities frnm GaAs immersed in HCl aq.-ethanol, HCl aq.-isopropyl alcohol, HCl aq.-acetone, and HCl diluted with water were weak as compared to that of GaAs immersed in HCl aq.-methanol. Strong PL intensity of GaAs immersed in HCl aq.-methanol solution is considered to be attributed to prevention of arsenic segregation and oxide formation on the surface. © 1990, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:2081 / 2083
页数:3
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