X-RAY-SCATTERING STUDIES OF INTERMEDIATE-RANGE ORDER IN AMORPHOUS GESE2

被引：30

作者：

FISCHERCOLBRIE, A

FUOSS, PH

机构：

[1] STANFORD UNIV,DEPT MAT SCI,STANFORD,CA 94305

[2] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1990年 / 126卷 / 1-2期

基金：

美国国家卫生研究院; 美国国家科学基金会;

关键词：

D O I：

10.1016/0022-3093(90)91020-R

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The intermediate-range order in thin, amorphous GeSe2 films has been analyzed by studying the evolution of order as a function of film thickness. The results are in excellent agreement with the chemically ordered random network model and disagree strongly with the two-dimensional raft models of a-GeSe2. The techniques developed can be used generally to study the structures of amorphous and poorly crystallized layers on substrates. © 1990.

引用

页码：1 / 34

页数：34

共 42 条

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