EXCITATION AND DOPING DEPENDENCES OF ELECTRON DIFFUSION LENGTH IN GAAS JUNCTION LASERS

被引：11

作者：

HWANG, CJ

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来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 02期

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D O I：

10.1063/1.1660092

中图分类号：

O59 [应用物理学];

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页码：757 / +

页数：1

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