CURRENT OSCILLATIONS BY 2 BULK NEGATIVE-RESISTANCE EFFECTS IN PHOTOEXCITED GAAS

被引：17

作者：

TOKUMARU, Y

机构：

[1] Electrotechnical Laboratory, Mukodai, Tanashi, Tokyo

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 07期

关键词：

D O I：

10.1063/1.1652782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-frequency (MHz) and low-frequency (kHz) current oscillations are found in photoexcited long GaAs diodes; the threshold field for the former is about 4.0 × 103 V/cm, and for the latter is about 1.5 × 10 3 V/cm. At an average applied field >4 × 103 V/cm, high-frequency oscillation occurs first and continues for a while, then low-frequency oscillation takes place. Experimental results suggest that the origin of high- and low-frequency oscillation are different from each other; the former is the two-valley transfer effect, and the latter the field-dependent trapping effect. © 1969 The American Institute of Physics.

引用

页码：212 / &

共 10 条

[1] MICROWAVE OSCILLATIONS IN GAASXP1-X ALLOYS (PULSED DC EXCITATION - E/T) [J].