TRANSMISSION ELECTRON MICROSCOPE INVESTIGATION OF REMOVAL OF MECHANICAL POLISHING DAMAGE ON SI AND GE BY CHEMICAL POLISHING

被引：9

作者：

STICKLER, R

BOOKER, GR

机构：

来源：

关键词：

D O I：

10.1149/1.2426158

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：485 / 488

页数：4

共 7 条

[1] LARGE-AREA JET ELECTROLYTIC POLISHING OF GE AND SI
BOOKER, GR
STICKLER, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1167 - 1171
[2] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY
BOOKER, GR
STICKLER, R
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &
[3] FAUST JW, 1962, J ELECTROCHEM SOC, V109, P1167
[4] Howie A., COMMUNICATION
[5] IDA I, 1962, REV ELECT COMMUN LAB, V10, P547
[6] SURFACE DAMAGE ON ABRADED SILICON SPECIMENS
STICKLER, R
BOOKER, GR
[J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (89): : 859 - &
[7] STICKLER R, UNPUB