GAAS MICROMACHINED WIDELY TUNABLE FABRY-PEROT FILTERS

被引：99

作者：

VAIL, EC

WU, MS

LI, GS

ENG, L

CHANGHASNAIN, CJ

机构：

[1] E.L Ginzton Lab, Stanford, CA 94305, Stanford University

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 03期

关键词：

GALLIUM ARSENIDE; LIGHT INTERFEROMETRY; NANOTECHNOLOGY; OPTICAL FILTERS;

D O I：

10.1049/el:19950102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present a surface-normal micromachined GaAs Fabry-Perot filter with 70nm of continuous tuning, 19dB extinction ratio, 4.9V of tuning voltage, and 50pA tuning current. The device is polarisation insensitive, can be fabricated into two-dimensional arrays, is easy to couple into fibre, and requires only two masks with no critical alignments.

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页码：228 / 229

页数：2

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