PREPARATION AND PROPERTIES OF A-SIGE-H FILMS FABRICATED WITH A SUPER CHAMBER (SEPARATED ULTRAHIGH-VACUUM REACTION CHAMBER)

被引:7
作者
HAKU, H
SAYAMA, K
NAKASHIMA, Y
TAKAHAMA, T
ISOMURA, M
TARUI, H
HISHIKAWA, Y
TSUDA, S
NAKANO, S
OHNISHI, M
KUWANO, Y
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 12期
关键词
D O I
10.1143/JJAP.26.1978
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1978 / 1982
页数:5
相关论文
共 7 条
[1]   EXPONENTIAL ABSORPTION-EDGE IN HYDROGENATED A-SI FILMS [J].
ABELES, B ;
WRONSKI, CR ;
TIEDJE, T ;
CODY, GD .
SOLID STATE COMMUNICATIONS, 1980, 36 (06) :537-540
[2]   HYDROGEN EVOLUTION FROM A-SI-C-H AND A-SI-GE-H ALLOYS [J].
BEYER, W ;
WAGNER, H ;
FINGER, F .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :857-860
[3]   GUIDING PRINCIPLE IN THE PREPARATION OF HIGH-PHOTOSENSITIVE HYDROGENATED AMORPHOUS SI-GE ALLOYS FROM GLOW-DISCHARGE PLASMA [J].
MATSUDA, A ;
KOYAMA, M ;
IKUCHI, N ;
IMANISHI, Y ;
TANAKA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L54-L56
[4]  
NABETA O, 1986, 1986 P INT PVSEC 2 B, P369
[5]  
Nakano S., 1986, MAT RES SOC P, V70, P511, DOI [10.1557/PROC-70-511, DOI 10.1557/PROC-70-511]
[6]  
ODA S, 1984, INT PHOTOVOLTAIC SCI, V1, P429
[7]   PREPARATION AND PROPERTIES OF HIGH-QUALITY A-SI FILMS WITH A SUPER CHAMBER (SEPARATED ULTRAHIGH-VACUUM REACTION CHAMBER) [J].
TSUDA, S ;
TAKAHAMA, T ;
ISOMURA, M ;
TARUI, H ;
NAKASHIMA, Y ;
HISHIKAWA, Y ;
NAKAMURA, N ;
MATSUOKA, T ;
NISHIWAKI, H ;
NAKANO, S ;
OHNISHI, M ;
KUWANO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (01) :33-38