PSEUDOPOTENTIAL IMPURITY THEORY AND COVALENT BONDING IN SEMICONDUCTORS

A method for constructing of the impurity potential is suggested including covalent effects. The approach presented is based on the Abarenkov-Heine model potential method. In contrast to other attempts, this method promises a quantitative estimation of the charge redistribution and polarisation effects due to the impurity potential. Special attention is paid to the impurity problem in zero-gap semiconductor. The local part of the impurity potential is given for the antimony atom as the impurity in gray tin crystal. © 1969.