PSEUDOPOTENTIAL IMPURITY THEORY AND COVALENT BONDING IN SEMICONDUCTORS

被引：7

作者：

JAROS, M

KOSTECKY, P

机构：

[1] Institue of Radioengineering and Electronics, Czech. Academy of Sciences

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1969年 / 30卷 / 03期

关键词：

D O I：

10.1016/0022-3697(69)90005-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A method for constructing of the impurity potential is suggested including covalent effects. The approach presented is based on the Abarenkov-Heine model potential method. In contrast to other attempts, this method promises a quantitative estimation of the charge redistribution and polarisation effects due to the impurity potential. Special attention is paid to the impurity problem in zero-gap semiconductor. The local part of the impurity potential is given for the antimony atom as the impurity in gray tin crystal. © 1969.

引用

页码：497 / &

共 22 条

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