THERMAL-STABILITY OF THE [(SI)M/(GE)N]P SUPERLATTICE INTERFACE

被引：20

作者：

JACKMAN, TE ^{[1
]}

BARIBEAU, JM ^{[1
]}

LOCKWOOD, DJ ^{[1
]}

AEBI, P ^{[1
]}

TYLISZCZAK, T ^{[1
]}

HITCHCOCK, AP ^{[1
]}

机构：

[1] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.45.13591

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of [(Si)m/(Ge)n]p superlattice interfaces and the onset of relaxation and interdiffusion initiated by annealing have been investigated with the use of extended x-ray-absorption fine structure and Raman scattering. For the as-grown material, the Ge-Ge bond length (0.2409 nm) was equal to that calculated for a fully strained Ge layer (0.2412 nm) while the Si-Ge bond length was significantly shorter. The results show conclusively that substantial intermixing along with partial relaxation of the Ge-Ge bonds occurs even for the shortest anneal at 700-degrees-C.

引用

页码：13591 / 13594

页数：4

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