CARBON CARBON BOND FORMING REACTIONS ON CU(110) SURFACES

被引:39
作者
CHIANG, CM
WENTZLAFF, TH
JENKS, CJ
BENT, BE
机构
[1] Department of Chemistry, Columbia University, New York
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期
关键词
D O I
10.1116/1.578002
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The coupling of one-carbon (C1) fragments to form carbon-carbon bonds has been studied on a Cu(110) surface. In these studies, methyl (CH3) and methylene (CH2) groups have been generated on Cu(110) by the dissociative adsorption of CH3I and CH2I2, respectively. Formation of CH3(a) below 200 K on this surface is inferred from the lack of molecular desorption as well as the lack of recombinative hydrogen desorption in temperature-programmed reaction (TPR) experiments. Similar low temperature C-I bond dissociation in CH2I2 to form CH2(a) is implicated based on the evolution of ethylene at 300 K in TPR studies. By studying the reactions of CD3(a) and CH2(a) coadsorbed and adsorbed separately on Cu (110), three C-C bond forming reactions have been identified: methyl coupling above 400 K to form ethane, methylene coupling at approximately 300 K to form ethylene, and methyl/methylene coupling (methylene insertion) at 300-350 K to produce ethyl groups. To our knowledge, this is the first time that methylene insertion, a potentially important chain growth step in hydrocarbon syntheses, has been definitively established on metal surfaces.
引用
收藏
页码:2185 / 2190
页数:6
相关论文
共 17 条