MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF VAPOR-PHASE GROWTH OF IN(1-X)GAXP

被引：11

作者：

BANS, VS ^{[1
]}

ETTENBERG, M ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1973年 / 34卷 / 06期

关键词：

D O I：

10.1016/S0022-3697(73)80020-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：1119 / 1129

页数：11

相关论文

共 24 条

[1] INFLUENCE OF DEPOSITION TEMPERATURE ON COMPOSITION AND GROWTH-RATE OF GAASX P1-X LAYERS
BAN, VS
TIETJEN, JJ
GOSSENBE.HF
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2471 - &
[2] MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 761 - &
[3] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1473 - &
[4] THEORETICAL STUDIES ON TRANSPORT IN GASEOUS PHASE OF COMPOUNDS III-V-GAAS, GAP, GASB
BOUGNOT, G
CHEVRIER, J
ETIENNE, D
BOHE, C
[J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (03) : 137 - &
[5] BREWER L, 1950, CHEMISTRY METALLURGY
[6] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION
FERGUSSON, RR
GABOR, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) : 585 - 592
[7] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION
FINCH, WF
MEHAL, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 814 - 817
[8] GLASSNER A, 1957, 5750 ARG NAT LAB REP
[9] BAND STRUCTURE OF INGAP FROM PRESSURE EXPERIMENTS
HAKKI, BW
JAYARAMA.A
KIM, CK
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5291 - &
[10] HURLE DTJ, 1968, P INT C CRYST GROWTH, P241