PREPARATION AND CHARACTERIZATION OF IN4SE3 FILMS

被引:24
作者
JULIEN, C
KHELFA, A
BENRAMDANE, N
GUESDON, JP
机构
[1] Laboratoire de Physique des Solides, associé au CNRS, Université Pierre et Marie Curie, 75252 Paris Cedex 05
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 27卷 / 01期
关键词
IN4SE3; FILMS; FLASH EVAPORATION; AMORPHOUS MATERIALS;
D O I
10.1016/0921-5107(94)90153-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of In4Se3 were obtained by vacuum evaporation of polycrystalline materials onto substrates at different temperatures T-s. Systemic X-ray analysis was carried out and revealed that the flash evaporation technique can produce stoichiometric films for depositing polycrystalline materials of composition In1.11Se0.89. Optical and electrical characterizations are reported. The energy gap of In4Se3 films is located between 1.41 and 1.48 eV depending on the substrate temperature. A.c. and d.c. conductivities were measured as a function of T-s. Amorphous films exhibit a T--1/4 dependence of the conductivity which fits well with the Mott model with a density of localized states N(E(F))=8.5x10(18) cm(-3) eV(-1). The effect of annealing temperature was also investigated. Hall measurements as a function of temperature show that the predominant conduction mechanism is scattering by grain boundaries in polycrystalline In4Se3 films.
引用
收藏
页码:53 / 60
页数:8
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