ACCUMULATION OF AMORPHOUSNESS AS A FUNCTION OF IRRADIATION FLUENCE IN A COMPOSITE MODEL OF DISORDER PRODUCTION

被引：44

作者：

CARTER, G ^{[1
]}

WEBB, R ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND

来源：

RADIATION EFFECTS LETTERS | 1979年 / 43卷 / 01期

关键词：

D O I：

10.1080/00337577908226418

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

[No abstract available]

引用

页码：19 / 24

页数：6

共 11 条

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HAIBULLIN, IB .

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[2]

CARTER G, 1978, RADIAT EFF DEFECT S, V36, P1, DOI 10.1080/00337577808233164

[3] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[4] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

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PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

[5]

HIROVONEN JK, 1971, 2ND P INT C ION IMPL

[6]

MOREHEAD FF, 1970, RADIAT EFF, V6, P25

[7] CRITERIA FOR BOMBARDMENT-INDUCED STRUCTURAL-CHANGES IN NON-METALLIC SOLIDS [J].

NAGUIB, HM ;

KELLY, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (01) :1-12

[8]

SWANSON ML, RAD EFFECTS SEMICOND, P359

[9] CONTRIBUTION OF STRAIN EFFECTS TOWARD DAMAGE MEASURED IN SEMICONDUCTORS BY CHANNELING [J].

WALKER, RS ;

THOMPSON, DA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :205-214

[10]

WEBB RE, UNPUBLISHED

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