CONTRIBUTION OF STRAIN EFFECTS TOWARD DAMAGE MEASURED IN SEMICONDUCTORS BY CHANNELING

被引：9

作者：

WALKER, RS ^{[1
]}

THOMPSON, DA ^{[1
]}

机构：

[1] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 36卷 / 3-4期

关键词：

D O I：

10.1080/00337577808240849

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：205 / 214

页数：10

共 13 条

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[2] RADIAL-DISTRIBUTION OF ION-INDUCED DEFECTS DETERMINED BY CHANNELING MEASUREMENTS [J].

BAERI, P ;

CAMPISANO, SU ;

CIAVOLA, G ;

FOTI, G ;

RIMINI, E .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :237-240

[3]

BARANOVA EC, 1976, RAD EFFECTS, V18, P21

[4]

CAMPISANO SU, 1975, ATOMIC COLLISIONS SO, V2, P905

[5]

GOLANSKI A, COMMUNICATION

[6]

LINDHARD J, 1968, KGL DAN VID SELSK MA, V36

[7]

LINDHARD J, 1965, KGL DAN VID SELSK MA, V34

[8]

Schmid K., 1973, RADIAT EFF, V17, P201, DOI [DOI 10.1080/00337577308232616, 10.1080/00337577308232616]

[9] EVIDENCE FOR SPIKE-EFFECTS IN LOW-ENERGY HEAVY-ION BOMBARDMENT OF SI AND GE [J].

THOMPSON, DA ;

WALKER, RS ;

DAVIES, JA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (3-4) :135-142

[10] CHANNELING MEASUREMENTS OF DAMAGE IN ION BOMBARDED SEMICONDUCTORS AT 50DEGREESK [J].

THOMPSON, DA ;

WALKER, RS .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (01) :37-46

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