RADIAL-DISTRIBUTION OF ION-INDUCED DEFECTS DETERMINED BY CHANNELING MEASUREMENTS

被引：6

作者：

BAERI, P ^{[1
]}

CAMPISANO, SU ^{[1
]}

CIAVOLA, G ^{[1
]}

FOTI, G ^{[1
]}

RIMINI, E ^{[1
]}

机构：

[1] UNIV CATANIA,IST STRUTTURA MAT,I-95129 CATANIA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS | 1976年 / 132卷 / JAN-F期

关键词：

D O I：

10.1016/0029-554X(76)90740-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：237 / 240

页数：4

共 17 条

[1]

APPLETON BR, 1975, CATANIA WORKING DATA

[2] CHANNELING-EFFECT STUDY OF DEUTERON-INDUCED DAMAGE IN SI AND GE CRYSTALS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :424-426

[3] CONVERSION FROM AN ENERGY SCALE TO A DEPTH SCALE IN CHANNELING EXPERIMENTS [J].

BOTTIGER, J ;

EISEN, FH .

THIN SOLID FILMS, 1973, 19 (02) :239-246

[4]

BROWN WL, 1973, RADIATION DAMAGE DEF, P416

[5]

DAVIES JA, 1974, CHANNELING THEORY OB, P284

[6]

DAVIES JV, TO BE PUBLISHED

[7]

FELDMAN LC, 1970, J APPL PHYS, V41, P766

[8]

HIRVONEN JK, 1971, ION IMPLANTATION SEM, P8

[9]

LINDHARD J, 1965, KGL DAN VID SELSK MA, V34

[10]

MAYER JW, 1970, ION IMPLANTATION SEM, pCH4

← 1 2 →