CHANNELING-EFFECT STUDY OF DEUTERON-INDUCED DAMAGE IN SI AND GE CRYSTALS

[1] CONVERSION FROM AN ENERGY SCALE TO A DEPTH SCALE IN CHANNELING EXPERIMENTS [J]. THIN SOLID FILMS, 1973, 19 (02) : 239 - 246

[2] BROWN WL, 1973, RADIATION DAMAGE DEF, P416

[3] BEAM-INDUCED LATTICE DISORDER IN CHANNELING EXPERIMENTS ON SI AND GE [J]. APPLIED PHYSICS LETTERS, 1972, 21 (09) : 425 - +

[4] CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON [J]. PHYSICAL REVIEW, 1968, 165 (02): : 345 - +

[5] TEMPERATURE AND ENERGY DEPENDENCE OF PROTON DECHANNELING IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (07): : 2169 - +

[6] HIRVONEN JK, 1971, ION IMPLANTATION SEM, P8

[7] Lindhard J., 1965, KGL DANSKE VIDENSKAB, V34

[8] MAYER JW, 1970, ION IMPLANTATION SEM, pCH3

[9] PABST HJ, 1973, RAD DAMAGE DEFECTS S, P438

[10] PICRAUX ST, 1972, APPL PHYS LETT, V20, P91, DOI 10.1063/1.1654061

[1] CONVERSION FROM AN ENERGY SCALE TO A DEPTH SCALE IN CHANNELING EXPERIMENTS [J]. THIN SOLID FILMS, 1973, 19 (02) : 239 - 246

[2] BROWN WL, 1973, RADIATION DAMAGE DEF, P416

[3] BEAM-INDUCED LATTICE DISORDER IN CHANNELING EXPERIMENTS ON SI AND GE [J]. APPLIED PHYSICS LETTERS, 1972, 21 (09) : 425 - +

[4] CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON [J]. PHYSICAL REVIEW, 1968, 165 (02): : 345 - +

[5] TEMPERATURE AND ENERGY DEPENDENCE OF PROTON DECHANNELING IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (07): : 2169 - +

[6] HIRVONEN JK, 1971, ION IMPLANTATION SEM, P8

[7] Lindhard J., 1965, KGL DANSKE VIDENSKAB, V34

[8] MAYER JW, 1970, ION IMPLANTATION SEM, pCH3

[9] PABST HJ, 1973, RAD DAMAGE DEFECTS S, P438

[10] PICRAUX ST, 1972, APPL PHYS LETT, V20, P91, DOI 10.1063/1.1654061