CHANNELING MEASUREMENTS OF DAMAGE IN ION BOMBARDED SEMICONDUCTORS AT 50DEGREESK

被引：15

作者：

THOMPSON, DA

WALKER, RS

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 30卷 / 01期

关键词：

D O I：

10.1080/00337577608233514

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：37 / 46

页数：10

共 23 条

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[6]

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[9] SUPER RANGES OF FAST IONS IN COPPER SINGLE CRYSTALS [J].

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[10] ENERGY DEPENDENCE OF LATTICE DISORDER IN ION-IMPLANTED SILICON [J].

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PHYSICA STATUS SOLIDI, 1969, 35 (01) :269-+

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