GROWTH, MORPHOLOGY AND IMPURITY CHARACTERIZATION OF SOME I III IV2 SULFIDES AND SELENIDES

[1] CHEMICAL VAPOR-DEPOSITION [J]. PHYSICS IN TECHNOLOGY, 1979, 10 (04): : 152 - 161

[2] NEW SEMICONDUCTORS WITH THE CHALCOPYRITE STRUCTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) : 609 - 610

[3] BAHR GC, 1972, PHYSICA STATUS SOL A, V13, P157

[4] BODNAR IV, 1977, INORG MATER+, V13, P755

[5] CHEMICAL VAPOR GROWTH AND PROPERTIES OF CUAES2 [J]. MATERIALS RESEARCH BULLETIN, 1975, 10 (10) : 1127 - 1130

[6] COOK WR, 1973, AD773780 US REP

[7] DONOHUE PC, 1974, J ELECTROCHEM SOC, V121, P829, DOI 10.1149/1.2401929

[8] PREPARATION AND PROPERTIES OF ZNS-TYPE CRYSTALS FROM THE MELT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (09) : 838 - 839

[9] GONZALEZ J, 1979, 1ST P NAT VEN S PHYS

[10] NEW SEMICONDUCTING COMPOUNDS OF DIAMOND TYPE STRUCTURE [J]. PHYSICA, 1954, 20 (11): : 1107 - 1109

[1] CHEMICAL VAPOR-DEPOSITION [J]. PHYSICS IN TECHNOLOGY, 1979, 10 (04): : 152 - 161

[2] NEW SEMICONDUCTORS WITH THE CHALCOPYRITE STRUCTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) : 609 - 610

[3] BAHR GC, 1972, PHYSICA STATUS SOL A, V13, P157

[4] BODNAR IV, 1977, INORG MATER+, V13, P755

[5] CHEMICAL VAPOR GROWTH AND PROPERTIES OF CUAES2 [J]. MATERIALS RESEARCH BULLETIN, 1975, 10 (10) : 1127 - 1130

[6] COOK WR, 1973, AD773780 US REP

[7] DONOHUE PC, 1974, J ELECTROCHEM SOC, V121, P829, DOI 10.1149/1.2401929

[8] PREPARATION AND PROPERTIES OF ZNS-TYPE CRYSTALS FROM THE MELT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (09) : 838 - 839

[9] GONZALEZ J, 1979, 1ST P NAT VEN S PHYS

[10] NEW SEMICONDUCTING COMPOUNDS OF DIAMOND TYPE STRUCTURE [J]. PHYSICA, 1954, 20 (11): : 1107 - 1109