MONOLITHIC IMAGE-REJECTION OPTOELECTRONIC UP-CONVERTERS THAT EMPLOY THE MMIC PROCESS

被引:9
作者
KAMITSUNA, H [1 ]
OGAWA, H [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, RADIO COMMUN SYST LABS, YOKOSUKA, KANAGAWA 23803, JAPAN
关键词
D O I
10.1109/22.260724
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents very small 30-GHz-band monolithic image-rejection optoelectronic up-converters that employ the HEMT-MMIC process for the first time. MMIC HEMT optoelectronic mixers are characterized by their direct photodetection and nonlinear characteristics. It is shown that common-source configurations have higher response than common-drain configurations, and up-converter applications are preferable to down-converter applications based on the HEMT direct photodetection characteristics. These characteristics are used to realize 30-GHz-band monolithic image-rejection optoelectronic up-converters. An in-phase divider and a branch-line hybrid with two HEMT optoelectronic mixers are successfully integrated into an MMIC chip with an area of 1.5 mm x 1.1 mm. Fundamental performance is demonstrated and excellent wideband performance, which comes from the well-balanced operation of monolithic integrated circuits, is confirmed. These monolithic optoelectronic mixers promise to realize compact and cost-effective 1-chip optical receivers for fiber optic links which support millimeter-waves.
引用
收藏
页码:2323 / 2329
页数:7
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