AL0.3GA0.7AS/GAAS HEMTS UNDER OPTICAL ILLUMINATION

被引：46

作者：

DESALLES, AA ^{[1
]}

ROMERO, MA ^{[1
]}

机构：

[1] CATHOLIC UNIV RIO DE JANEIRO,CTR STUDIES TELECOMMUN,BR-22453 RIO DE JANEIRO,BRAZIL

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 12期

关键词：

D O I：

10.1109/22.106540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Theoretical and experimental work for the dc and RF performance of depletion mode Al0.3Ga0.7As/GaAs HEMT's under optical illumination is presented. Photoconductive effect increasing the 2-DEG channel electron concentration and photovoltaic effect in the gate junction are considered. Optical tuning of a 2 GHz HEMT oscillator and optical control of the gain of a 2 to 6 GHz HEMT amplifier are presented and potential applications are described.

引用

页码：2010 / 2017

页数：8

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