SIO2/SI INTERFACES STUDIED BY STM

被引:7
作者
NIWA, M
IWASAKI, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期
关键词
D O I
10.1143/JJAP.28.L2320
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L2320 / L2323
页数:4
相关论文
共 6 条
[1]   THE SI-SIO2 INTERFACE - CORRELATION OF ATOMIC-STRUCTURE AND ELECTRICAL-PROPERTIES [J].
HAHN, PO ;
HENZLER, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02) :574-583
[2]  
KERN W, 1970, RCA REV, V31, P187
[3]   CHEMICAL INFORMATION FROM AUGER-ELECTRON SPECTROSCOPY [J].
MADDEN, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :677-689
[4]  
NIWA M, 1990, 4TH INT C STM S
[5]   THE FORMATION OF HYDROGEN PASSIVATED SILICON SINGLE-CRYSTAL SURFACES USING ULTRAVIOLET CLEANING AND HF ETCHING [J].
TAKAHAGI, T ;
NAGAI, I ;
ISHITANI, A ;
KURODA, H ;
NAGASAWA, Y .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3516-3521
[6]   UNUSUALLY LOW SURFACE-RECOMBINATION VELOCITY ON SILICON AND GERMANIUM SURFACES [J].
YABLONOVITCH, E ;
ALLARA, DL ;
CHANG, CC ;
GMITTER, T ;
BRIGHT, TB .
PHYSICAL REVIEW LETTERS, 1986, 57 (02) :249-252