THE FORMATION OF HYDROGEN PASSIVATED SILICON SINGLE-CRYSTAL SURFACES USING ULTRAVIOLET CLEANING AND HF ETCHING

被引：505

作者：

TAKAHAGI, T ^{[1
]}

NAGAI, I ^{[1
]}

ISHITANI, A ^{[1
]}

KURODA, H ^{[1
]}

NAGASAWA, Y ^{[1
]}

机构：

[1] TORAY RES CTR INC,OTSU,SHIGA,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3516 / 3521

页数：6

共 33 条

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[2] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
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[3] MEAN FREE-PATH OF PHOTO-ELECTRONS IN SILICON AND SILICON-OXIDES
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[4] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY
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BEAN, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399
[5] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[6] SURFACE INFRARED STUDY OF SI(100)-(2X1)H
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[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 282 - 285
[7] HYDRIDE FORMATION ON THE SI(100)-H2O SURFACE
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[J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3677 - 3680
[8] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619
[9] SILICON SURFACE CLEANING BY LOW-DOSE ARGON-ION BOMBARDMENT FOR LOW-TEMPERATURE (750-DEGREES-C) EPITAXIAL SILICON DEPOSITION .1. PROCESS CONSIDERATIONS
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REIF, R
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3388 - 3397
[10] SILICON SURFACE CLEANING BY LOW-DOSE ARGON-ION BOMBARDMENT FOR LOW-TEMPERATURE (750-DEGREES-C) EPITAXIAL DEPOSITION .2. EPITAXIAL QUALITY
GARVERICK, LM
COMFORT, JH
YEW, TR
REIF, R
BAIOCCHI, FA
LUFTMAN, HS
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3398 - 3404

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