GAIN EXPANSION AND INTERMODULATION IN A MESFET AMPLIFIER

被引：13

作者：

BLANCO, C

机构：

[1] Laboratorio de Microondas, ETSI de Telecomunicacion, Ciudad Universitaria, Madrid

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 01期

关键词：

Intermodulation; Microwave amplifiers; Schottky-gate field-effect transistors;

D O I：

10.1049/el:19790023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple way of biasing and tuning an X-band m.e.s.f.e.t. for gain expansion is presented. The measured gain and phase of an experimental amplifier make possible a prediction of the third-order intermodulation using a simple power series. The calculated and measured intermodulation are in agreement with each other. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：31 / 32

页数：2