SHAPE OF THE SILICON ABSORPTION-COEFFICIENT SPECTRUM NEAR 1.63 EV

被引：1

作者：

GEIST, J ^{[1
]}

MIGDALL, A ^{[1
]}

BALTES, H ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,INST QUANTUM ELECTR,CH-8093 ZURICH,SWITZERLAND

来源：

APPLIED OPTICS | 1990年 / 29卷 / 24期

关键词：

D O I：

10.1364/AO.29.003548

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report high precision, high spectral resolution measurements of the absorption coefficient of silicon in the spectral region from 1.61 to 1.65 eV. Our data show a smooth absorption spectrum with no discernable features in this spectral region where structure has been reported previously. Our data and analysis suggest that the second indirect transition in silicon has yet to be detected in absorption coefficient spectra. © 1990 Optical Society of America.

引用

页码：3548 / 3554

页数：7

共 12 条

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