EFFECT OF DC ELECTRIC-FIELD ON THE BASIC PROPERTIES OF RF PLASMA DEPOSITED A-SI

[1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] AMORPHOUS SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 449 - 453

[3] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[4] KNIGHTS JC, 1978, 10TH P C SOL STAT DE, P101

[5] OKAMOTO H, 1979, SURFACE SCI, V86

[6] OKAMOTO H, 1978, P INT C SOLID FILMS, pB52

[7] OKAMOTO H, UNPUBLISHED

[8] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[9] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 29 - 42

[10] TSAI CC, 1977, P INT C AMORPHOUS LI, P3

[1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] AMORPHOUS SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 449 - 453

[3] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[4] KNIGHTS JC, 1978, 10TH P C SOL STAT DE, P101

[5] OKAMOTO H, 1979, SURFACE SCI, V86

[6] OKAMOTO H, 1978, P INT C SOLID FILMS, pB52

[7] OKAMOTO H, UNPUBLISHED

[8] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[9] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 29 - 42

[10] TSAI CC, 1977, P INT C AMORPHOUS LI, P3