TRANSPORT-PROPERTIES OF SILICON

被引：237

作者：

WEBER, L

GMELIN, E

机构：

[1] Max-Planck-Institut für Festkörperforschung, Stuttgart 80

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 53卷 / 02期

关键词：

D O I：

10.1007/BF00323873

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical conductivity, thermal conductivity, and thermoelectric power of single-crystalline silicon are investigated at temperatures between 2 and 300 K. From the measured data we calculate the mean free path of electrons and phonons and separate diffusion part and phonon-drag part of the thermoelectric power. Using a new method, we evaluate the mean free path of those phonons which are responsible for the phonon drag effect.

引用

页码：136 / 140

页数：5

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