SURFACE-DEPLETED PHOTOCONDUCTORS

被引：8

作者：

LAM, DKW

MACDONALD, RI

NOAD, JP

SYRETT, BA

机构：

[1] COMMUN RES CTR,DEPT COMMUN,OTTAWA K2H 8S2,ONTARIO,CANADA

[2] CARLETON UNIV,DEPT ELECTR,OTTAWA K1S 5B6,ONTARIO,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 05期

关键词：

D O I：

10.1109/T-ED.1987.23044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1057 / 1060

页数：4

共 16 条

[1] ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR-DETECTORS [J].

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1431-1441

[2] USE OF A SURROUNDING P-TYPE RING TO DECREASE BACKGATE BIASING IN GAAS-MESFETS [J].

BLUM, AS ;

FLESNER, LD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) :97-99

[3] A COMPARISON OF INTERDIGITAL AND STRAIGHT STRUCTURES FOR A PHOTOCONDUCTIVE DETECTOR [J].

BOUDEBOUS, FH ;

PASCAL, D ;

LAVAL, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) :836-837

[4] INTERDIGITATED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS [J].

CHEN, CY ;

PANG, YM ;

ALAVI, K ;

CHO, AY ;

GARBINSKI, PA .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :99-101

[5]

Edwards W. D., 1980, IEEE Electron Device Letters, VEDL-1, P149, DOI 10.1109/EDL.1980.25268

[6]

GAMMEL JC, 1979, IEDM, P634

[7] FAST OPTOELECTRONIC CROSSPOINT ELECTRICAL SWITCHING OF GAAS PHOTOCONDUCTORS [J].

LAM, DKW ;

MACDONALD, RI .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (01) :1-3

[8] OPTOELECTRONIC SWITCH MATRICES - RECENT DEVELOPMENTS [J].

MACDONALD, RI ;

LAM, DKW .

OPTICAL ENGINEERING, 1985, 24 (02) :220-224

[9] MONOLITHIC ARRAY OF OPTOELECTRONIC BROAD-BAND SWITCHES [J].

MACDONALD, RI ;

LAM, DKW ;

HUM, RH ;

NOAD, JP .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (02) :219-223

[10] FAST PHOTOCONDUCTIVE OPTOELECTRONIC BROAD-BAND SWITCH WITH LOW CONTROL VOLTAGE [J].

MACDONALD, RI ;

HARA, EH ;

HUM, RH .

ELECTRONICS LETTERS, 1981, 17 (17) :611-612

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