USE OF A SURROUNDING P-TYPE RING TO DECREASE BACKGATE BIASING IN GAAS-MESFETS

被引：11

作者：

BLUM, AS ^{[1
]}

FLESNER, LD ^{[1
]}

机构：

[1] USN,CTR OCEAN SYST,SAN DIEGO,CA 92152

来源：

关键词：

D O I：

10.1109/EDL.1985.26056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：97 / 99

页数：3

共 7 条

[1] MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS
CHANG, MF
LEE, CP
HOU, LD
VAHRENKAMP, RP
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 869 - 871
[2] DAVANZO D, 1982, IEEE T ELECTRON DEV, V29, P1051
[3] Itoh T., 1979, Gallium Arsenide and Related Compounds 1978, P326
[4] KOCOT C, 1982, IEEE T ELECTRON DEV, V29, P1059
[5] GAAS-MESFETS WITH PARTIAL P-TYPE DRAIN REGIONS
LEE, CP
WELCH, BM
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 200 - 202
[6] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT
MAKRAMEBEID, S
GAUTARD, D
DEVILLARD, P
MARTIN, GM
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 161 - 163
[7] SUBSTRATE AND INTERFACE EFFECTS IN GAAS FETS
TRANDUC, H
ROSSEL, P
GRAFFEUIL, J
AZIZI, C
NUZILLAT, G
BERT, G
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 655 - 659