GAAS-MESFETS WITH PARTIAL P-TYPE DRAIN REGIONS

[1] COX HM, 1980, SEMI INSULATING III

[2] CROSSLEY I, 1976 P INT S GALL AR, P289

[3] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3348 - 3352

[4] HOWER PL, 1968 P INT S GALL AR, P187

[5] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045

[6] P-TYPE ANODE STRUCTURE FOR GAAS TEDS ON SEMI-INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 167 - 169

[7] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 97 - 98

[8] SUBSTRATE AND INTERFACE EFFECTS IN GAAS FETS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 655 - 659

[9] LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1116 - 1124

[10] YOKAYAMA N, 1976 P INT S GALL AR, P201

[1] COX HM, 1980, SEMI INSULATING III

[2] CROSSLEY I, 1976 P INT S GALL AR, P289

[3] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3348 - 3352

[4] HOWER PL, 1968 P INT S GALL AR, P187

[5] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045

[6] P-TYPE ANODE STRUCTURE FOR GAAS TEDS ON SEMI-INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 167 - 169

[7] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 97 - 98

[8] SUBSTRATE AND INTERFACE EFFECTS IN GAAS FETS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 655 - 659

[9] LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1116 - 1124

[10] YOKAYAMA N, 1976 P INT S GALL AR, P201