CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS

[1] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3348 - 3352

[2] HOWER PL, 1968, I PHYSICS C SER, V7

[3] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045

[4] ITOH T, 1978, I PHYS C SER, V45, P326

[5] ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5339 - 5344

[6] KOCOT C, COMMUNICATION

[7] Lampert M., 1970, CURRENT INJECTIONS S

[8] TEMPERATURE EFFECT ON LOW THRESHOLD VOLTAGE ION-IMPLANTED GAAS-MESFETS [J]. ELECTRONICS LETTERS, 1981, 17 (20) : 760 - 761

[9] Rose A, 1963, CONCEPTS PHOTOCONDUC

[10] SUBSTRATE AND INTERFACE EFFECTS IN GAAS FETS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 655 - 659

[1] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3348 - 3352

[2] HOWER PL, 1968, I PHYSICS C SER, V7

[3] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045

[4] ITOH T, 1978, I PHYS C SER, V45, P326

[5] ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5339 - 5344

[6] KOCOT C, COMMUNICATION

[7] Lampert M., 1970, CURRENT INJECTIONS S

[8] TEMPERATURE EFFECT ON LOW THRESHOLD VOLTAGE ION-IMPLANTED GAAS-MESFETS [J]. ELECTRONICS LETTERS, 1981, 17 (20) : 760 - 761

[9] Rose A, 1963, CONCEPTS PHOTOCONDUC

[10] SUBSTRATE AND INTERFACE EFFECTS IN GAAS FETS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 655 - 659