SUBSTRATE AND INTERFACE EFFECTS IN GAAS FETS

被引：8

作者：

TRANDUC, H

ROSSEL, P

GRAFFEUIL, J

AZIZI, C

NUZILLAT, G

BERT, G

机构：

[1] UNIV TOULOUSE 3,F-31077 TOULOUSE,FRANCE

[2] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 12期

关键词：

D O I：

10.1051/rphysap:019780013012065500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：655 / 659

页数：5

共 11 条

[1]

AZIZI C, 1977, CR ACAD SCI B PHYS, V285, P145

[2]

BARRERA J, 1975, 5TH BIENN CORN EL 2, V3, P135

[3] BARRIER MODE BEHAVIOR OF A JUNCTION FET AT LOW DRAIN CURRENTS [J].

BREWER, RJ .

SOLID-STATE ELECTRONICS, 1975, 18 (11) :1013-1017

[4]

DUCHEMIN JP, 1977, REV TECH THOMSON, V9, P685

[5]

HOOPER WW, 1969, AFALTR6930 TECHN REP, P28

[6]

HOUNG Y, 1977, THESIS STANFORD U, P44

[7]

LEHOVIC K, 1975, I PHYS C SER, P292

[8]

NOZAKI T, 1975, I PHYS C 24, P46

[9] RELAXATION PHENOMENA IN GAAS PLANAR STRUCTURES [J].

ROSSEL, P ;

TRANDUC, H ;

GRAFFEUIL, J ;

AZIZI, C .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (10) :1679-1694

[10]

TANIMOTO M, 1976, 6TH ESSDERC MUNCH B, V4

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