STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS

[1] ELECTRICAL TRAPS IN GAAS MICROWAVE FETS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 297 - 298

[2] ASAI S, 1973, JAP J APPL PHYS S1, V12, P71

[3] ASAI S, 1972, 4TH P C SOL STAT DEV

[4] BARRERA J, 1975, 5TH P BIENN CORN EL, P135

[5] CHEN DR, 1975, MICROWAVE J NOV, P60

[6] 4-GHZ 15-W POWER GAAS MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 559 - 563

[7] IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 563 - 567

[8] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J]. SOLID-STATE ELECTRONICS, 1969, 12 (07) : 573 - +

[9] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 577 - &

[10] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3348 - 3352

[1] ELECTRICAL TRAPS IN GAAS MICROWAVE FETS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 297 - 298

[2] ASAI S, 1973, JAP J APPL PHYS S1, V12, P71

[3] ASAI S, 1972, 4TH P C SOL STAT DEV

[4] BARRERA J, 1975, 5TH P BIENN CORN EL, P135

[5] CHEN DR, 1975, MICROWAVE J NOV, P60

[6] 4-GHZ 15-W POWER GAAS MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 559 - 563

[7] IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 563 - 567

[8] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J]. SOLID-STATE ELECTRONICS, 1969, 12 (07) : 573 - +

[9] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 577 - &

[10] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3348 - 3352