GROWTH-KINETICS IN THE MOVPE OF ZNSE ON GAAS USING ZINC AND SELENIUM ALKYLS

被引:51
作者
MITSUHASHI, H
MITSUISHI, I
KUKIMOTO, H
机构
关键词
D O I
10.1016/0022-0248(86)90304-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:219 / 222
页数:4
相关论文
共 6 条
[1]  
KUZNETSOV PI, 1980, SOVIET PHYS DOKL, V252, P211
[2]   MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAAS USING ALKYLS OF ZN, S AND SE [J].
MITSUHASHI, H ;
MITSUISHI, I ;
KUKIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11) :L864-L866
[3]   COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD [J].
MITSUHASHI, H ;
MITSUISHI, I ;
MIZUTA, M ;
KUKIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L578-L580
[4]   THE MOCVD GROWTH OF ZNSE USING ME2ZN, H2SE AND SEET2 [J].
SRITHARAN, S ;
JONES, KA ;
MOTYL, KM .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :656-664
[5]   MOCVD GROWTH OF ZNSE FILMS USING DIETHYLSELENIDE [J].
SRITHARAN, S ;
JONES, KA .
JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) :231-234
[6]   VAPOR-PHASE EPITAXIAL GROWTH AND SOME PROPERTIES OF ZNSE, ZNS, AND CDS [J].
YIM, WM ;
STOFKO, EJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :381-&