MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAAS USING ALKYLS OF ZN, S AND SE

被引：47

作者：

MITSUHASHI, H

MITSUISHI, I

KUKIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 11期

关键词：

D O I：

10.1143/JJAP.24.L864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L864 / L866

页数：3

共 13 条

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