SUPPRESSION OF HOT-CARRIER EFFECTS IN SUBMICROMETER SURFACE-CHANNEL PMOSFETS

被引：6

作者：

BRASSINGTON, MP ^{[1
]}

POULTER, MW ^{[1
]}

ELDIWANY, M ^{[1
]}

机构：

[1] NATL SEMICOND CORP,FAIRCHILD RES CTR,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

OPTIMIZATION;

D O I：

10.1109/16.3379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot-carrier-induced degradation in surface-channel (p-type polysilicon gate) PMOSFETs is investigated. Hot-electron-induced punchthrough is found to limit the lifetime of these devices. Although these surface-channel devices are observed to be more reliable than conventional buried-channel transistors, a lightly doped drain design is found to be necessary to provide adequate suppression of hot-carrier generation in 0. 8- mu m-gate-length (L//e//f//f equals 0. 5 mu m) transistors operated at 5 V.

引用

页码：1149 / 1151

页数：3

共 8 条

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BRASSINGTON, MP
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) : 320 - 324
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BRUCE, RH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 584 - 588
[6] Koyanagi M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P722
[7] Schmitz A. E., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P423
[8] HOT-CARRIER-INDUCED DEGRADATION IN P-CHANNEL LDD MOSFETS
TZOU, JJ
YAO, CC
CHEUNG, R
CHAN, HWK
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 5 - 7

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