GENERATION, DESIGN AND TUNING OF OTA-C HIGH-FREQUENCY SINUSOIDAL OSCILLATORS

被引:37
作者
LINARES-BARRANCO, B [1 ]
RODRIGUEZVAZQUEZ, A [1 ]
SANCHEZSINENCIO, E [1 ]
HUERTAS, JL [1 ]
机构
[1] TEXAS A&M UNIV SYST, DEPT ELECT ENGN, COLL STN, TX 77843 USA
来源
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1992年 / 139卷 / 05期
关键词
DESIGN; OSCILLATORS;
D O I
10.1049/ip-g-2.1992.0086
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A systematic approach to derive practical CMOS sinusoidal oscillators is presented. A general topology is given to implement sinusoidal oscillators by using operational transconductance amplifier capacitor (OTA-C) techniques. To illustrate the proposed approach five different structures are presented from this general topology and analysed, taking into account the CMOS OTAs dominant non-idealities. Building blocks are presented for amplitude control, both by automatic gain control (AGC) schemes and by limitation schemes. Experimental results from 3 mum and 2 mum CMOS (MOSIS) prototypes showing oscillation frequencies up to 69 MHz are included. The amplitudes can be adjusted between 1 V peak-to-peak and 100 mV peak-to-peak. Total harmonic distortions (THD) from 2.8% down to 0.2% have been experimentally measured in the laboratory. A frequency tuning loop for these structures is introduced that provides a precise, temperature and parasitic independent frequency-to-voltage relationship. Experimental results for the tuning loop are presented.
引用
收藏
页码:557 / 568
页数:12
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