ANALYSIS OF NONLINEAR CHARACTERISTICS AND TRANSIENT-RESPONSE OF IMPATT AMPLIFIERS

被引：15

作者：

KUNO, HJ ^{[1
]}

机构：

[1] HUGHES RES LABS, TORRANCE, CA 90509 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1973年 / MT21卷 / 11期

关键词：

D O I：

10.1109/TMTT.1973.1128112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：694 / 702

页数：9

共 20 条

[1] A STUDY OF LOCKING PHENOMENA IN OSCILLATORS [J].

ADLER, R .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1946, 34 (06) :351-357

[2]

Bogliubov N.N., 1961, ASYMPTOTIC METHODS T

[3]

FUKATSU Y, 1971, 1971 IEEE INT SOL ST

[4] ACTIVE IMPATT DIODE PARAMETERS OBTAINED BY COMPUTER REDUCTION OF EXPERIMENTAL DATA [J].

GEWARTOWSKI, JW ;

MORRIS, JE .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (03) :157-+

[5] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].

GILDEN, M ;

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&

[6] USE OF DESCRIBING FUNCTIONS IN STUDY OF NONLINEAR ACTIVE MICROWAVE CIRCUITS [J].

GUSTAFSSON, L ;

HANSSON, GHB ;

LUNDSTROM, KI .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1972, MT20 (06) :402-+

[7] NEGATIVE-RESISTANCE DIODE POWER AMPLIFICATION [J].

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :1-&

[8] A SILICON DIODE MICROWAVE OSCILLATOR [J].

JOHNSTON, RL ;

DELOACH, BC ;

COHEN, BG .

BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02) :369-+

[9] CHARACTERIZATION AND MODELING OF IMPATT OSCILLATORS [J].

KRAMER, NB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (11) :838-+

[10] NONLINEAR AND LARGE-SIGNAL CHARACTERISTICS OF MILLIMETER-WAVE IMPATT AMPLIFIERS [J].

KUNO, HJ ;

ENGLISH, DL .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (11) :703-706

← 1 2 →