ELECTRICAL-PROPERTIES OF CUGASE2 SINGLE-CRYSTALS

被引：36

作者：

MANDEL, L

TOMLINSON, RD

HAMPSHIRE, MJ

NEUMANN, H

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND

[2] KARL MARX UNIV,SEKT PHYS,DDR-701 LEIPZIG,GER DEM REP

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 03期

关键词：

D O I：

10.1016/0038-1098(79)90121-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hall effect and resistivity data have been obtained from melt grown single crystals of CuGaSe2. A shallow accepter state with an ionisation energy of approximately 30 meV has been identified and the results are discussed and compared with similar data obtained from other Cu-III-VI2 compounds. © 1979.

引用

页码：201 / 204

页数：4

共 19 条

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